Method for the reduction of defectivity in vapor deposited films
US9328416B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2014 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Jun 19, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45542
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for depositing film on substrates are described. In various cases, a high thermal conductivity gas such as helium is used to deposit a conditioning layer on surfaces of the reaction chamber before it is used to process substrates. The helium may be used to help atomize/vaporize a liquid reactant in a heated injection module before the reactant is delivered to the reaction chamber. In some embodiments, a purge gas including helium is used during a post-deposition purge during deposition on substrates. The disclosed embodiments allow for mixed recipe processing without having to clean the reaction chamber between recipes, and without forming a high number of particles/defects on the substrates. This allows for an improved throughput of high quality film, even where mixed recipes are used in a single reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.