Plasma reactor with tiltable overhead RF inductive source
US9330887B2 · kind B2 · utility
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5References
8Claims
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Key dates
| Filing date | Mar 4, 2013 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Nov 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.