Methods of forming line patterns in substrates
US9330914B2 · kind B2 · utility
2Cited by
7References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2013 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Jan 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method including forming a line pattern in a substrate includes using a plurality of longitudinally spaced projecting features formed along respective guide lines as a template in forming a plurality of directed self-assembled (DSA) lines that individually comprise at least one of (a): the spaced projecting features and DSA material longitudinally there-between, and (b): are laterally between and laterally spaced from immediately adjacent of the guide lines. Substrate material elevationally inward of and laterally between the DSA lines may be processed using the DSA lines as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.