Methods for selective etching of a multi-layer substrate
US9330928B2 · kind B2 · utility
1Cited by
1References
12Claims
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Key dates
| Filing date | Nov 20, 2013 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Dec 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed for the selective etching of a multi-layer metal oxide stack comprising a platinum layer on a TiN layer on an HfO2 or ZrO2 layer on a substrate. In some embodiments, the method comprises a physical sputter process to selectively etch the platinum layer, followed by a plasma etch process comprises CHF3 and oxygen to selectively etch the TiN, HfO2 or ZrO2 layers with respect to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.