Patent · US Active

Semiconductor device

US9331057B2 · kind B2 · utility

1Cited by

10References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thorsten Meyer · Regensburg, DE
Grit Sommer · Grafing, DE
Ralf Plieninger · Poing, DE

Key dates

Filing date	Oct 26, 2007
Grant date	May 3, 2016
Priority date	—
Expiry date	Jan 8, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/68
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device is disclosed. One embodiment provides a semiconductor chip. The semiconductor chip includes a first electrode of a capacitor. An insulating layer is arranged on top of the first electrode. A second electrode of the capacitor is applied over the insulating layer, wherein the second electrode is made of a conductive layer arranged over the semiconductor chip.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.