Three dimensional NAND device with silicon germanium heterostructure channel
US9331093B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2014 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Oct 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a monolithic three dimensional NAND string including forming a stack of alternating layers of a first material and a second material different from the first material over a substrate, forming an at least one opening in the stack, forming at least a portion of a memory film in the at least one opening and forming a first portion of a semiconductor channel followed by forming a second portion of the semiconductor channel in the at least one opening. The second portion of the semiconductor channel comprises silicon and germanium and contains more germanium than a first portion of the semiconductor channel which is located closer to the memory film than the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.