Semiconductor device and method for fabricating the same
US9331200B1 · kind B1 · utility
376Cited by
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11Claims
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Key dates
| Filing date | Jan 6, 2015 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Jan 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/259
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon; and forming a first epitaxial layer, a second epitaxial layer, and a silicide layer in the substrate adjacent to the gate structure. Preferably, the first epitaxial layer, the second epitaxial layer, and the silicide layer comprise SiGeSn.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.