MRAM element with low writing temperature
US9336846B2 · kind B2 · utility
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4References
12Claims
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Key dates
| Filing date | Jan 16, 2014 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Jan 16, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5615
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.