Methods of forming a semiconductor circuit element and semiconductor circuit element

US9337045B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Carsten Grass · Dresden, DE
• Peter Baars · Dresden, DE

Key dates

• Filing date: Aug 13, 2014
• Grant date: May 10, 2016
• Expiry date: Aug 22, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0177
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure provides a method of forming a semiconductor circuit element and a semiconductor circuit element, wherein the semiconductor circuit element is formed on the basis of a replacement gate process replacing a dummy gate structure of a semiconductor device of the semiconductor circuit element by a gate oxide structure and a gate electrode material, wherein the gate oxide structure comprises a high-k material that is in the ferroelectric phase. In some illustrative embodiments herein, a semiconductor device is provided, the semiconductor device having a gate structure disposed over an active region of a semiconductor substrate. Herein, the gate structure comprises a spacer structure and a dummy gate structure which is replaced by a gate oxide structure and a gate electrode material, wherein the gate oxide structure comprises a ferroelectric high-k material.