Semiconductor die back layer separation method
US9337098B1 · kind B1 · utility
10Cited by
7References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2015 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Aug 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, semiconductor die are singulated from a semiconductor wafer having a backmetal layer by placing the semiconductor wafer onto a carrier tape with the backmetal layer adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the backmetal layer within the singulation lines, and separating portions of the backmetal layer using a fluid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.