Semiconductor device and method of forming stepped interposer for stacking and electrically connecting semiconductor die
US9337116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2010 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Feb 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate has a plurality of different size recesses formed in the substrate to provide a stepped interposer. A conductive via can be formed through the stepped interposer. An insulating layer follows a contour of the stepped interposer. A conductive layer is formed over the insulating layer following the contour of the stepped interposer. A first semiconductor die is partially disposed in a first recess and electrically connected to the conductive layer. A second semiconductor die is partially disposed in a second recess and electrically connected to the conductive layer. The first semiconductor die is electrically connected to the second semiconductor die through the conductive layer. The first and second semiconductor die can be flipchip type semiconductor die. An encapsulant is deposited over the first and second semiconductor die. A portion of the stepped interposer can be removed to reduce thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.