Method of forming an ESD device and structure therefor

US9337178B2 · kind B2 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• David D. Marreiro · Phoenix, US
• Yupeng Chen · Beijing, CN
• Ralph N. Wall · Pocatello, US
• Umesh Sharma · San Jose, US
• Harry Yue Gee · Santa Clara, US

Key dates

• Filing date: Oct 9, 2013
• Grant date: May 10, 2016
• Expiry date: Mar 29, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/60

Abstract

In one embodiment, an ESD device is configured to include a trigger device that assists in forming a trigger of the ESD device. The trigger device is configured to enable a transistor or a transistor of an SCR responsively to an input voltage having a value that is no less than the trigger value of the ESD device.