Semiconductor device with epitaxial structures
US9337193B2 · kind B2 · utility
9Cited by
16References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2015 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Mar 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A semiconductor device includes at least two fin-shaped structures, a gate structure, at least two epitaxial structures and a cap. The fin-shaped structures are disposed on a substrate and are covered by the gate structure. The epitaxial structures spaced apart from each other are disposed at one side of the gate structure and respectively directly contact each fin-shaped structure. The cap simultaneously surrounds the epitaxial structures, and at least two adjacent caps are merged together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.