Technique for selectively processing three dimensional device
US9337314B2 · kind B2 · utility
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2References
19Claims
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Key dates
| Filing date | Dec 11, 2013 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Dec 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0241
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to selectively process a three dimensional device, comprising providing a substrate having a first surface that extends horizontally, the substrate comprising a structure containing a second surface that extends vertically from the first surface; providing a film on the substrate, the film comprising carbon species; and etching a selected portion of the film by exposing the selected portion of the film to an etchant containing hydrogen species, where the etchant excludes oxygen species and fluorine species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.