Non-amine post-CMP composition and method of use
US9340760B2 · kind B2 · utility
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10References
17Claims
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Key dates
| Filing date | Jun 16, 2014 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Nov 25, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amine and ammonium-containing compounds, e.g., quaternary ammonium bases. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.