Method and system for dimensional uniformity using charged particle beam lithography
US9343267B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2014 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Jul 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31776
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.