Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US9343290B2 · kind B2 · utility
3Cited by
4References
19Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 19, 2014 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Jul 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming an oxide film on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas to the substrate; and supplying an ozone gas to the substrate. In the act of supplying the precursor gas, the precursor gas is supplied to the substrate in a state where a catalytic gas is not supplied to the substrate, and in the act of supplying the ozone gas, the ozone gas is supplied to the substrate in a state where an amine-based catalytic gas is supplied to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.