High voltage semiconductor devices including electric arc suppression material and methods of forming the same
US9343383B2 · kind B2 · utility
2Cited by
13References
36Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 2, 2012 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | May 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/16195
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high voltage semiconductor device can include a high voltage semiconductor device package that includes a wall defining a recess within the high voltage semiconductor device package. A high voltage semiconductor chip can be in the recess and a high voltage electric arc suppression material can be in the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.