Semiconductor device having a dense trench transistor cell array

US9343565B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Peter Nelle · Munich, DE
• Markus Zundel · Egmating, DE

Key dates

• Filing date: Sep 23, 2015
• Grant date: May 17, 2016
• Expiry date: Sep 23, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/157

Abstract

One embodiment of a semiconductor device includes a dense trench transistor cell array. The dense trench transistor cell array includes a plurality of transistor cells in a semiconductor body. A width w3 of a transistor mesa region of each of the plurality of transistor cells and a width w1 of a first trench of each of the plurality of transistor cells satisfy the following relationship: w3<1.5×w1. The semiconductor device further includes semiconductor diodes. At least one of the semiconductor diodes is arranged between first and second parts of the plurality of transistor cells and includes a diode mesa region adjoining opposing walls of second trenches. A depth d1 of the first trench and a depth d2 of the second trenches differ by at least 20%.