Magnetic memory device and method of forming thereof
US9343662B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2014 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Sep 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/30
Abstract
A device and a method of forming a device are presented. A substrate is provided. Front end of line processing is performed to form circuit component on the substrate and back end of line processing is performed to include the uppermost inter level dielectric (ILD) layer. The uppermost ILD layer includes first and second interconnects. A pad level is formed over the uppermost ILD layer. A storage unit of a memory cell is provided in the pad level. The storage unit is coupled to the first interconnect of the uppermost ILD layer. A cell interconnect and a pad interconnect are formed in the pad level. The cell interconnect is formed on top of and coupled to the storage unit and the pad interconnect is coupled to the second interconnect in the uppermost ILD layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.