Use of topography to direct assembly of block copolymers in grapho-epitaxial applications
US9349604B2 · kind B2 · utility
14Cited by
17References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 17, 2014 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Oct 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) surrounds the exposed topography. Further to the method, the template is filled with a block copolymer (BCP) to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.