Semiconductor devices and methods of manufacturing the same
US9349633B2 · kind B2 · utility
5Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2014 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Dec 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming an isolation layer on a substrate, where an active pattern is defined, forming an insulating interlayer on the active pattern of the substrate and the isolation layer, removing portions of the insulating interlayer, the active pattern and the isolation layer to form a first recess, forming a first contact in the first recess on a first region of the active pattern exposed by the first recess, removing portions of the active pattern and the isolation layer in the first recess by performing an isotropic etching process, to form an enlarged first recess, and
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.