Heterojunction semiconductor device and manufacturing method

US9349819B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Godefridus Adrianus Maria Hurkx · Eindhoven, NL
• Jeroen Antoon Croon · Waalre, NL
• Johannes Josephus Theodorus Marinus Donkers · Valkenswaard, NL
• Jan Sonsky · Leuven, BE
• Stephen John Sque
• Andreas Bernardus Maria Jansman · Nuenen, NL
• Markus Mueller · Heilbronn, DE
• Stephan Heil · Eindhoven, NL
• Tim Boettcher · Scheeßel, DE

Key dates

• Filing date: May 18, 2015
• Grant date: May 24, 2016
• Expiry date: May 18, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.