Oxide-nitride-oxide stack having multiple oxynitride layers
US9349824B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2014 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Feb 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a memory device is described. Generally, the method includes: forming a tunneling layer on a substrate; forming on the tunneling layer a multi-layer charge storing layer including at least a first charge storing layer comprising an oxygen-rich oxynitride overlying the tunneling layer, and a second charge storing layer overlying the first charge storing layer comprising a silicon-rich and nitrogen-rich oxynitride layer that is oxygen-lean relative to the first charge storing layer and comprises a majority of charge traps distributed in the multi-layer charge storing layer; and forming a blocking layer on the second oxynitride layer; and forming a gate layer on the blocking layer. Other embodiments are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.