Methods of forming semiconductor devices comprising ferroelectric elements and fast high-K metal gate transistors

US9349842B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Till Schloesser · Dresden, DE
• Peter Baars · Dresden, DE

Key dates

• Filing date: Mar 11, 2013
• Grant date: May 24, 2016
• Expiry date: Dec 19, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

Ferroelectric circuit elements, such as field effect transistors or capacitors, may be formed on the basis of hafnium oxide, which may also be used during the fabrication of sophisticated high-k metal gate electrode structures of fast transistors. To this end, the hafnium-based oxide having appropriate thickness and material composition may be patterned at any appropriate manufacturing stage, without unduly affecting the overall process flow for fabricating a sophisticated high-k metal gate electrode structure.