Patent · US Active

Submicron gap thermophotovoltaic structure and fabrication method

US9349891B2 · kind B2 · utility

0Cited by
7References
36Claims
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Key dates

Filing dateJan 20, 2014
Grant dateMay 24, 2016
Priority date
Expiry dateJan 20, 2034

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/50
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

An MTPV thermophotovoltaic chip comprising a photovoltaic cell substrate, micron/sub-micron gap-spaced from a juxtaposed heat or infrared radiation-emitting substrate, with a radiation-transparent intermediate window substrate preferably compliantly adhered to the photovoltaic cell substrate and bounding the gap space therewith.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.