Light emitting element and method for manufacturing same
US9349918B2 · kind B2 · utility
7Cited by
8References
13Claims
0Family size
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Key dates
| Filing date | May 25, 2012 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | May 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.