Patent · US Active

Light emitting element and method for manufacturing same

US9349918B2 · kind B2 · utility

7Cited by
8References
13Claims
0Family size

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Key dates

Filing dateMay 25, 2012
Grant dateMay 24, 2016
Priority date
Expiry dateMay 25, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/872
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.