Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US9354508B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2013 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Mar 27, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70958
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.