Patent · US Active

Semiconductor device including a dielectric material

US9355881B2 · kind B2 · utility

35Cited by

7References

22Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Bernhard Goller · Villach, AT
Eva-Maria Hess · Gremsdorf, DE
Edward Fuergut · Nuremberg, DE
Christian Schweiger · Wilhelmsfeld, DE

Key dates

Filing date	Feb 18, 2014
Grant date	May 31, 2016
Priority date	—
Expiry date	Aug 10, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/20642
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for manufacturing a semiconductor device includes providing a carrier and a semiconductor wafer having a first side and a second side opposite to the first side. The method includes applying a dielectric material to the carrier or the semiconductor wafer and bonding the semiconductor wafer to the carrier via the dielectric material. The method includes processing the semiconductor wafer and removing the carrier from the semiconductor wafer such that the dielectric material remains on the semiconductor wafer to provide a semiconductor device comprising the dielectric material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.