Semiconductor device with transistor local interconnects
US9355910B2 · kind B2 · utility
9Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2011 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Dec 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/907
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided for implementing at least one logic element. The semiconductor device includes a semiconductor substrate with a first transistor and a second transistor formed on the semiconductor substrate. Each of the transistors comprises a source, a drain, and a gate. A trench silicide layer electrically connects one of the source or the drain of the first transistor to one of the source or the drain of the second transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.