Patent · US Active

Semiconductor device and method for manufacturing a semiconductor device

US9356092B2 · kind B2 · utility

0Cited by

1References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Franco Mariani · Bad Abbach, DE
Andreas Bauer · Obernburg, DE
Reinhard Hess · Straubing, DE
Gerhard Leschik · Regensburg, DE

Key dates

Filing date	Sep 12, 2013
Grant date	May 31, 2016
Priority date	—
Expiry date	Sep 12, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/124
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method includes providing a semiconductor wafer including multiple semiconductor chips, forming a first scribe line on a frontside of the semiconductor wafer, wherein the first scribe line has a first width and separates semiconductor chips of the semiconductor wafer, forming a second scribe line on the frontside of the semiconductor wafer, wherein the second scribe line has a second width and separates semiconductor chips of the semiconductor wafer, wherein the first scribe line and the second scribe line intersect in a crossing area which is greater than a product of the first width and the second width, and plasma etching the semiconductor wafer in the crossing area.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.