Plasma enhanced chemical vapor deposition (PECVD) source
US9362093B2 · kind B2 · utility
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6References
20Claims
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Key dates
| Filing date | Dec 23, 2013 |
| Grant date | Jun 7, 2016 |
| Priority date | — |
| Expiry date | Apr 16, 2034 |
Classification
- Technology area (CPC —)General
Abstract
One embodiment is directed to a plasma source comprising a body in which a cavity is formed and at least two self-contained magnetron assemblies disposed within the cavity. The magnetron assemblies are mutually electrically isolated from each other and from the body. In one implementation of such an embodiment, the self-contained magnetron assemblies comprise closed-drift magnetron assemblies. Other embodiments are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.