Enhanced etching processes using remote plasma sources
US9362130B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2014 |
| Grant date | Jun 7, 2016 |
| Priority date | — |
| Expiry date | Feb 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods of etching a patterned substrate may include flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region. The oxygen-containing precursor may be flowed into the region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents. The methods may also include flowing a fluorine-containing precursor into a second remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents. The methods may include flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the processing region, and using the effluents to etch a patterned substrate housed in the substrate processing region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.