Method for forming a mask by etching conformal film on patterned ashable hardmask
US9362133B2 · kind B2 · utility
14Cited by
74References
17Claims
0Family size
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Key dates
| Filing date | Dec 10, 2013 |
| Grant date | Jun 7, 2016 |
| Priority date | — |
| Expiry date | Mar 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatuses for multiple patterning using image reversal are provided. The methods may include depositing gap-fill ashable hardmasks using a deposition-etch-ash method to fill gaps in a pattern of a semiconductor substrate and eliminating spacer etching steps using a single-etch planarization method. Such methods may be performed for double patterning, multiple patterning, and two dimensional patterning techniques in semiconductor fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.