Methods of forming diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products

US9362181B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Ruilong Xie · Niskayuna, US
• Min Gyu Sung · Yongsan-gu, KR
• Ryan Ryoung-Han Kim · Albany, US
• Kwan-Yong Lim · Plano, US
• Chanro Park · Clifton Park, US

Key dates

• Filing date: Mar 31, 2015
• Grant date: Jun 7, 2016
• Expiry date: Mar 31, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

One illustrative method disclosed herein includes forming first sacrificial gate structures above a fin for two active gates and a dummy gate, removing the first sacrificial gate structure for the dummy gate so as to define a cavity that exposes the fin while leaving the first sacrificial gate structures for the two active gates intact, etching through the cavity to form a trench in the fin under the cavity, forming a second sacrificial gate structure for the dummy gate, removing the first sacrificial gate structures for the two active gates and the second sacrificial gate structure for the dummy gate so as to define a replacement gate cavity for the two active gates and the dummy gate, and forming a replacement gate structure in each of the replacement gate cavities, wherein the replacement gate structure for the dummy gate extends into the trench in the fin.