Method for fabricating pipe gate nonvolatile memory device
US9362301B2 · kind B2 · utility
6Cited by
0References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2014 |
| Grant date | Jun 7, 2016 |
| Priority date | — |
| Expiry date | Dec 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device includes a pipe insulation layer having a pipe channel hole, a pipe gate disposed over the pipe insulation layer, a pair of cell strings each having a columnar cell channel, and a pipe channel coupling the columnar cell channels and surrounding inner sidewalls and a bottom of the pipe channel hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.