Patent · US Active

Method for fabricating a cavity structure, for fabricating a cavity structure for a semiconductor structure and a semiconductor microphone fabricated by the same

US9363609B2 · kind B2 · utility

5Cited by

2References

19Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Wolfgang Friza · Villach, AT
Thomas Grille · Villach, AT
Klaus Muemmler · Dresden, DE
Guenter Ziegler · Polling, DE
Carsten Ahrens · Birkenfeld, DE

Key dates

Filing date	Oct 2, 2013
Grant date	Jun 7, 2016
Priority date	—
Expiry date	Mar 30, 2034

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81C2201/0109
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.