Tone inverted directed self-assembly (DSA) fin patterning
US9368350B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2015 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Jun 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for DSA fin patterning includes forming a BCP layer over a lithographic stack, the BCP layer having first and second blocks, the lithographic stack disposed over a hard mask and substrate, and the hard mask including first and second dielectric layers; removing the first block to define a fin pattern in the BCP layer with the second block; etching the fin pattern into the first dielectric layer; filling the fin pattern with a tone inversion material; etching back the tone inversion material that overfills the fin pattern; removing the first dielectric layer selectively to define an inverted fin pattern from the tone inversion material; etching the inverted fin pattern into the second dielectric layer of the hard mask; removing the tone inversion material; and transferring the inverted fin pattern of the second dielectric layer into the substrate to define fins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.