Method for forming a semiconductor structure
US9368365B1 · kind B1 · utility
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3References
10Claims
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Assignee
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Key dates
| Filing date | May 12, 2015 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | May 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method for forming a semiconductor structure includes: first, a plurality of fin structures are formed on a substrate and arranged along a first direction, next, a first fin cut process is performed, so as to remove parts of the fin structures which are disposed within at least one first fin cut region, and a second fin cut process is then performed, so as to remove parts of the fin structures which are disposed within at least one second fin cut region, where the second fin cut region is disposed along at least one edge of the first fin cut region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.