Temperature ramping using gas distribution plate heat
US9368370B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2015 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Mar 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/263
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for etching a dielectric layer disposed on a substrate is provided. The method includes de-chucking the substrate from an electrostatic chuck in an etching processing chamber, and cyclically etching the dielectric layer while the substrate is de-chucked from the electrostatic chuck. The cyclical etching includes remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the dielectric layer disposed on the substrate at a first temperature. Etching the dielectric layer generates etch byproducts. The cyclical etching also includes vertically moving the substrate towards a gas distribution plate in the etching processing chamber, and flowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts. The sublimation is performed at a second temperature, wherein the second temperature is greater than the first temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.