Patent · US Active

Method of manufacturing a semiconductor device with buried channel/body zone and semiconductor device

US9368408B2 · kind B2 · utility

1Cited by

2References

10Claims

0Family size

Assignee

Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

Stefan Tegen · Dresden, DE
Marko Lemke · Dresden, DE
Rolf Weis · Dresden, DE

Key dates

Filing date	Dec 27, 2013
Grant date	Jun 14, 2016
Priority date	—
Expiry date	Jan 23, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/84
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a source zone of a first conductivity type formed in a first electrode fin that extends from a first surface into a semiconductor portion. A drain region of the first conductivity type is formed in a second electrode fin that extends from the first surface into the semiconductor portion. A channel/body zone is formed in a transistor fin that extends between the first and second electrode fins at a distance to the first surface. The first and second electrode fins extend along a first lateral direction. A width of first gate sections, which are arranged on opposing sides of the transistor fin, along a second lateral direction perpendicular to the first lateral direction is greater than a distance between the first and second electrode fins.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.