Package on package (PoP) bonding structures
US9368438B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2013 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | May 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18162
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various embodiments of mechanisms for forming through package vias (TPVs) with multiple conductive layers and/or recesses in a die package and a package on package (PoP) device with bonding structures utilizing the TPVs are provided. One of the multiple conductive layers acts as a protective layer of the main conductive layer of the TPVs. The protective layer is less likely to oxidize and also has a slower formation rate of intermetallic compound (IMC) when exposed to solder. The recesses in TPVs of a die package are filled by solder from the other die package and the IMC layer formed is below the surface of TPVs, which strengthen the bonding structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.