Semiconductor device including integrated passive device formed over semiconductor die with conductive bridge and fan-out redistribution layer
US9368563B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2013 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Nov 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2001/0078
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a first semiconductor die. A first inductor is formed over the first semiconductor die. A second inductor is formed over the first inductor and aligned with the first inductor. An insulating layer is formed over the first semiconductor die and the first and second inductors. A conductive bridge is formed over the insulating layer and electrically connected between the second inductor and the first semiconductor die. In one embodiment, the semiconductor device has a second semiconductor die and a conductive layer is formed between the first and second semiconductor die. In another embodiment, a capacitor is formed over the first semiconductor die. In another embodiment, the insulating layer has a first thickness over a footprint of the first semiconductor die and a second thickness less than the first thickness outside the footprint of the first semiconductor die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.