High power gallium nitride electronics using miscut substrates
US9368582B2 · kind B2 · utility
22Cited by
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Key dates
| Filing date | Nov 4, 2013 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Feb 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic device includes a III-V substrate having a hexagonal crystal structure and a normal to a growth surface characterized by a misorientation from the <0001> direction of between 0.15° and 0.65°. The electronic device also includes a first epitaxial layer coupled to the III-V substrate and a second epitaxial layer coupled to the first epitaxial layer. The electronic device further includes a first contact in electrical contact with the substrate and a second contact in electrical contact with the second epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.