Organosilane precursors for ALD/CVD silicon-containing film applications
US9371338B2 · kind B2 · utility
20Cited by
15References
19Claims
0Family size
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Key dates
| Filing date | Jul 19, 2013 |
| Grant date | Jun 21, 2016 |
| Priority date | — |
| Expiry date | Nov 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02532
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.