Patent · US Active

Tantalum coil for sputtering and method for processing the coil

US9371578B2 · kind B2 · utility

2Cited by
11References
4Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMar 14, 2011
Grant dateJun 21, 2016
Priority date
Expiry dateMay 10, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/3447
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Provided is a tantalum coil for sputtering disposed between a substrate and a sputtering target, wherein the tantalum coil has irregularities so that the surface roughness Rz of the tantalum coil is 150 μm or more and the number of threads is 15 to 30 TPI (Threads per inch) in a transverse direction and 10 to 30 TPI in a vertical direction. An object of the present invention is to take measures to prevent the sputtered grains accumulated on the surface of a tantalum coil from flaking so as to prevent the generation of particles and arcing that is caused by the flaking of the sputtered grains accumulated on the surface of the coil disposed between a substrate and a sputtering target, and the adhesion of the scattered flakes onto the substrate surface; and thereby to provide a technology of improving the quality and productivity of electronic components and stably providing semiconductor elements and devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.