Two terminal resistive access devices and methods of formation thereof
US9373786B1 · kind B1 · utility
4Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2013 |
| Grant date | Jun 21, 2016 |
| Priority date | — |
| Expiry date | Mar 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
In accordance with an embodiment of the present invention, a memory cell includes a two terminal access device disposed above a semiconductor substrate. The access device includes a two terminal resistive switching device having substantially zero retention. The two terminal resistive switching device has a low resistance state and a high resistance state. A memory device is disposed above the semiconductor substrate. The memory device is coupled to the access device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.