Method for fabricating semiconductor device
US9373788B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Feb 20, 2014 |
| Grant date | Jun 21, 2016 |
| Priority date | — |
| Expiry date | Jul 17, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45523
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for fabricating a semiconductor device includes supplying a first source gas including a germanium (Ge) precursor onto a semiconductor substrate for a first time period, and periodically interrupting the supplying of the first source gas for the first time period to form Ge elements on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.