Patent · US Active

Plasma processing device and operation method

US9376751B2 · kind B2 · utility

1Cited by
0References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 5, 2015
Grant dateJun 28, 2016
Priority date
Expiry dateFeb 5, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/334
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

An operation method of a plasma processing device, includes performing a plasma process on a workpiece by supplying first high frequency power of a predetermined output to an electrode and generating plasma; and performing a charge storage process before the plasma process when a time interval from an end of a previous operation of the plasma processing device exceeds a predetermined interval, the charge storage process including supplying, to the electrode, second high frequency power of a lower output than the predetermined output.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.