Method for writing to a magnetic tunnel junction device
US9378796B2 · kind B2 · utility
3Cited by
11References
20Claims
0Family size
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Key dates
| Filing date | Dec 23, 2014 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Dec 23, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of applying a write current to a magnetic tunnel junction device minimizes sub-threshold leakage. NMOS- and PMOS-follower circuits are used in applying the write current, and bias signals for the follower circuits are isolated from global bias signals before the write current is applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.